介绍了用阳极氧化腐蚀形成多孔硅的工艺，并分析了它的微结构，实验测定了多孔硅光致发光谱（ＰＬ），由ＰＬ谱的峰值位于可见光区，不同于Ｓｉ的带隙能量；用纳米量子限制效应（Ｑ－ＣＥ），解释了多孔硅中进入量子线中电子和空穴能量增量为ΔＥｃ和ΔＥｖ，于是多了孔硅有效带宽成为Ｅ＝Ｅ。＋ΔＥ。而Ｅ。是Ｓｉ的带宽为ｌ．０８ｅＶ，ΔＥｃ和上ΔＥｖ分别为ｈ２／４ｍｅｑ２和ｈ２／４ｍｈｑ２，由此计算与实验结果一致。 The process of forming porous silicon by anodic oxidation was introduced and the microstructure of the porous silicon was analyzed. The PL of the porous silicon was measured experimentally. The peak of the PL spectrum was in the visible region, which was different from the band gap energy of Si. Using quantum confinement effect (Q-CE), it is explained that the energy increment of electrons and holes entering porous quantum wire is ΔEc and ΔEv, so the effective bandwidth of porous silicon becomes E = E. + ΔE. E. Is the bandwidth of Si l. 08eV, ΔEc and ΔEv are h2 / 4meq2 and h2 / 4mhq2, respectively, which are consistent with the experimental results.